Samsung (SSNLF) Stock Climbs After Nvidia (NVDA) AI Chip Collaboration News

Key Takeaways Samsung (SSNLF) has partnered with Nvidia (NVDA) to create advanced ferroelectric NAND flash memory technology. A Physics-Informed Neural Operator (PINO) AI model was created in collaboration with Georgia Institute of Technology researchers. This AI-driven PINO model accelerates ferroelectric NAND performance analysis by more than 10,000 times versus conventional approaches. Traditional chip design software (TCAD) requires 60 hours for each simulation — this new AI technology completes the task in less than 10 seconds. Samsung previously revealed that ferroelectric NAND technology reduces power usage by 96% versus traditional NAND chips. A groundbreaking collaboration between Samsung and Nvidia is pushing the boundaries of memory chip technology with potential implications for AI infrastructure. BREAKING $AMD @Samsung HBM @AMD CEO Dr. @LisaSu Meets Samsung, Naver on HBM Supply Lisa Su, CEO of AMD, a competitor of NVIDIA, is reportedly visiting South Korea to discuss cooperation plans with Samsung Electronics, Naver, and other companies. According to the tech… https://t.co/YVY8bZCe2L pic.twitter.com/f1UtI8GtkA — Mike (@MikeLongTerm) March 11, 2026 The partnership brings together Samsung, Nvidia, and academic researchers from Georgia Institute of Technology to develop a specialized AI model known as a Physics-Informed Neural Operator (PINO). This innovation aims to accelerate the development timeline for ferroelectric NAND flash memory. Unlike traditional silicon-based chips, ferroelectric NAND utilizes ferroelectric materials capable of retaining data without continuous power input. This characteristic positions the technology as a promising solution for creating more energy-efficient computing systems. Samsung SDI Co., Ltd., 0L2T.L Samsung has invested heavily in ferroelectric NAND research over recent years. The company published research in Nature journal demonstrating how this technology achieves a remarkable 96% decrease in power consumption whe...